<?xml version="1.0" encoding="utf-8"?>
<!DOCTYPE eagle SYSTEM "eagle.dtd">
<eagle version="6.0">
<drawing>
<library>
<description>&lt;b&gt;Field Effect Transistors&lt;/b&gt;&lt;p&gt;
&lt;author&gt;Created by librarian@cadsoft.de&lt;/author&gt;&lt;p&gt;
&lt;p&gt;
Symbols changed according to IEC617&lt;p&gt; 
All types, packages and assignment to symbols and pins checked&lt;p&gt;
Package outlines partly checked&lt;p&gt;
&lt;p&gt;
JFET = junction FET&lt;p&gt;
IGBT-x = insulated gate bipolar transistor&lt;p&gt;
x=N: NPN; x=P: PNP&lt;p&gt;
IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)&lt;P&gt;
m=D: depletion mode (Verdr&amp;auml;ngungstyp)&lt;p&gt;
m=E: enhancement mode (Anreicherungstyp)&lt;p&gt;
c: N=N-channel; P=P-Channel&lt;p&gt;
GDSB: gate, drain, source, bulk&lt;p&gt;
&lt;p&gt;
by R. Vogg  15.March.2002</description>
<packages>
<package name="TO92-">
<description>&lt;b&gt;TO 92 pad in line&lt;/b&gt;</description>
</package>
<package name="TO92L">
<description>&lt;b&gt;TO 92, long pads 5.08 mm&lt;/b&gt;</description>
</package>
<package name="TO3">
<description>&lt;b&gt;TO 3&lt;/b&gt;</description>
</package>
<package name="TO3A">
<description>&lt;b&gt;TO 3 A&lt;/b&gt;</description>
</package>
<package name="TO72">
<description>&lt;b&gt;TO 72&lt;/b&gt;</description>
</package>
<package name="TO202">
<description>&lt;b&gt;TO 202 horizontal&lt;/b&gt;</description>
</package>
<package name="TO18">
<description>&lt;b&gt;TO 18&lt;/b&gt;</description>
</package>
<package name="TO92">
<description>&lt;b&gt;TO 92&lt;/b&gt;</description>
</package>
<package name="TO218">
<description>&lt;b&gt;TO 218 horizontal&lt;/b&gt;</description>
</package>
<package name="TO220">
<description>&lt;b&gt;TO 220 horizontal&lt;/b&gt;</description>
</package>
<package name="TO218V">
<description>&lt;b&gt;TO 218 vertical&lt;/b&gt;</description>
</package>
<package name="TO220V">
<description>&lt;b&gt;TO 200 vertical&lt;/b&gt;</description>
</package>
<package name="TOP3">
<description>&lt;b&gt;TOP 3 horizontal&lt;/b&gt;</description>
</package>
<package name="TOP3V">
<description>&lt;b&gt;TOP 3 vertical&lt;/b&gt;</description>
</package>
<package name="TO5">
<description>&lt;b&gt;TO 5&lt;/b&gt;</description>
</package>
<package name="TO126">
<description>&lt;b&gt;TO 126 horizontal&lt;/b&gt;</description>
</package>
<package name="TO66">
<description>&lt;b&gt;TO 66&lt;/b&gt;</description>
</package>
<package name="TO202V">
<description>&lt;b&gt;TO 202 vertical&lt;/b&gt;</description>
</package>
<package name="TO126V">
<description>&lt;b&gt;TO 126 vertical&lt;/b&gt;</description>
</package>
<package name="TO-92">
<description>&lt;b&gt;TP 92&lt;/b&gt;</description>
</package>
<package name="SO-8">
<description>&lt;b&gt;SO 8 small outline&lt;/b&gt;</description>
</package>
<package name="TO-39">
<description>&lt;b&gt;TP 39&lt;/b&gt;</description>
</package>
<package name="TO-52">
<description>&lt;b&gt;TO 52&lt;/b&gt;</description>
</package>
<package name="TO237">
<description>&lt;b&gt;TO 273&lt;/b&gt;</description>
</package>
<package name="P-TO247">
<description>&lt;b&gt;TO 247, Plastic Transistor Single Outline&lt;/b&gt;</description>
</package>
<package name="DIL04">
<description>&lt;b&gt;Dual In Line Package&lt;/b&gt;</description>
</package>
<package name="SSOT6">
<description>&lt;b&gt;SuperSOT-6&lt;/b&gt;&lt;p&gt;
Source:  Fairchild Semiconductor International ssot6_dim.pdf&lt;br&gt;
  September 1998, Rev. A</description>
</package>
<package name="1206-8CHIP-FET">
<description>&lt;b&gt;1206-8 ChipFET&lt;/b&gt;&lt;p&gt;
Source: http://www.vishay.com/docs/72593/72593.pdf&lt;br&gt;
http://www.vishay.com/docs/71151/71151.pdf</description>
</package>
<package name="SOT23">
<description>&lt;b&gt;SOT-23&lt;/b&gt;</description>
</package>
<package name="211-07_SMD">
<description>&lt;b&gt;211-07&lt;/b&gt; SMD&lt;p&gt;
Source: http://www.macom.com/data/datasheet/MRF136.pdf</description>
</package>
<package name="TO252">
<description>&lt;b&gt;SMALL OUTLINE TRANSISTOR&lt;/b&gt;&lt;p&gt;
TS-003</description>
</package>
<package name="TO251AA">
<description>&lt;b&gt;I-Pak&lt;/b&gt; International Rectifier</description>
</package>
<package name="TO263">
<description>&lt;b&gt;SMALL OUTLINE TRANSISTOR&lt;/b&gt;&lt;p&gt;
TS-005</description>
</package>
<package name="SOT223">
<description>&lt;b&gt;Small Outline Transistor&lt;/b&gt;</description>
</package>
<package name="SC75_INFINEON">
<description>&lt;b&gt;Small Outline Transistor&lt;/b&gt; Reflow soldering&lt;p&gt;
INFINEON, www.infineon.com/cmc_upload/0/000/010/257/eh_db_5b.pdf</description>
</package>
<package name="SOT363_INFINEON">
<description>&lt;b&gt;Small Outline Transistor; 6 leads&lt;/b&gt; Reflow soldering&lt;p&gt;
INFINEON, www.infineon.com/cmc_upload/0/000/010/257/eh_db_5b.pdf</description>
</package>
<package name="SC74_INFINEON">
<description>&lt;b&gt;Small Outline Transistor; 6 leads&lt;/b&gt; Reflow soldering&lt;p&gt;
INFINEON, www.infineon.com/cmc_upload/0/000/010/257/eh_db_5b.pdf</description>
</package>
<package name="TO252-51">
<description>&lt;b&gt;Transistor Outline Package&lt;/b&gt;&lt;p&gt;
P-TO252-5-1 SIEMENS TLE4270</description>
</package>
<package name="SO08-IRF">
<description>&lt;b&gt;SO8&lt;/b&gt;&lt;p&gt;
Source: http://www.irf.com/product-info/datasheets/data/irf7389.pdf</description>
</package>
<package name="TO50">
<description>&lt;b&gt;Case 50 B 4 DIN 41869&lt;/b&gt; JEDEC TO 50&lt;p&gt;
Source: TELEFUNKEN ELECTRONIK BF960.pdf</description>
</package>
<package name="SOT103">
<description>&lt;b&gt;SOT 103&lt;/b&gt;&lt;p&gt;
Source: BF981.pdf</description>
</package>
<package name="2SK241">
<description>&lt;b&gt;THOSIBA 2-4E1D&lt;/b&gt;&lt;p&gt;</description>
</package>
<package name="SPAK">
<description>&lt;b&gt;SPAK&lt;/b&gt;&lt;p&gt;
Source: HITACHI .. 2SK439.pdf</description>
</package>
<package name="D2PACK">
<description>&lt;b&gt;D2PACK&lt;/b&gt;&lt;p&gt;
INTERNATIONAL RECTIFIER, irg4bc15ud-s.pdf</description>
</package>
<package name="2-10M1A">
<description>&lt;b&gt;Single In Line 2-10M1A&lt;/b&gt;&lt;p&gt;
Source: http://pdf1.alldatasheet.com/datasheet-pdf/view/30769/TOSHIBA/2SK389.html</description>
</package>
</packages>
<symbols>
<symbol name="JFET-N">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="JFET-P">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="IGFET-DP-GDSB">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-GDS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGFET-DN-2GDS">
<pin name="G2" direction="pas"/>
<pin name="G1" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="IGFET-EP-GDS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGBT-N">
<pin name="G" direction="pas"/>
<pin name="E" direction="pas"/>
<pin name="C" direction="pas"/>
</symbol>
<symbol name="IGFET-DN-GDSB">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGFET-DN-GDS">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="IGFET-DP-GDS">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="IGFET-EN-GDSB">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGFET-EP-GDSB">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="B" direction="pas"/>
</symbol>
<symbol name="IGBT-P">
<pin name="G" direction="pas"/>
<pin name="E" direction="pas"/>
<pin name="C" direction="pas"/>
</symbol>
<symbol name="N-MOSFET-GDS-D">
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
</symbol>
<symbol name="DUAL-GATE-N_MOSFET">
<pin name="G1" direction="pas"/>
<pin name="G2" direction="pas"/>
<pin name="DRAIN" direction="pas"/>
<pin name="SOURCE" direction="pas"/>
</symbol>
<symbol name="N-MOSFET-GDS">
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
</symbol>
<symbol name="N-MOSFET">
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
</symbol>
<symbol name="P-MOSFET">
<pin name="S" direction="pas"/>
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
</symbol>
<symbol name="IRF7389">
<pin name="P-S" direction="pas"/>
<pin name="P-G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="N-S" direction="pas"/>
<pin name="N-G" direction="pas"/>
</symbol>
<symbol name="2SK241">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="JFET_N">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
<symbol name="JFET_P">
<pin name="G" direction="pas"/>
<pin name="D" direction="pas"/>
<pin name="S" direction="pas"/>
</symbol>
</symbols>
<devicesets>
<deviceset name="BUZ10" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 20A; 0,080Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ11" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 30A; 0,040Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ20" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 12A; 0,2Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ23" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 10A; 0,2Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ24" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 32A; 0,060Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ36" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 200V; 22A; 0,12Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ71" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 14A; 0,1Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ72" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 10A; 0,2Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ22" prefix="Q">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt; not checked</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ64" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 11,5A; 0,40Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ325" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 10,5A; 0,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO218">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="V" package="TO218V">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ347" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 40A; 0,030Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ382" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 12,5A; 0,4Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ172" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -100V; -5A; 0,8Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ171" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -50V; 7A; 0,4Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ21" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 19A; 0,1Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ45" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 500V; 9,5A; 0,6Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ60" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 5,5A; 1,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ50A" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 1000V; 2,5A; 5,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ230" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 1000V; 5,5A; 2,0Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS101" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 200V; 0,16A; 11Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS92" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -200V; -0,15A; 11Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS295" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; not checked</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS296" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; not checked</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS97" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 200V; 1.5A; 1,6Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS110" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -50V; -0,17A; 6Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF540" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 100V; 28A; 0,077Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF510" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 100V; 5,6A; 0,54Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF620" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 200V; 5,2A; 0,8Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF840" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 500V; 8A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF330" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 5,9A; 1,0Ohm (=BUZ63)</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF350" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); 400V; 0.3 Ohm; 14A</description>
<gates>
<gate name="A" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3 4" route="any"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N3819" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N3820" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;&lt;p&gt;
Source: http://www.fairchildsemi.com/ds/2N/2N3820.pdf</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N5116" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;&lt;p&gt;
Source:  Vishay 70260.pdf</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF247" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF256" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF245" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;&lt;p&gt;
http://www.onsemi.com/pub/Collateral/BF245A-D.PDF</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BFT10" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BFT11" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;&lt;p&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4221" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4392" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4857" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFD9210" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="DIL04">
<connects>
<connect gate="G$1" pin="D" pad="3 4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SD211" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDSB"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="B" pad="4"/>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SD215" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDSB"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="B" pad="4"/>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN66AF" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 2A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN88AF" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 80V; 2A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="LP0701N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -16,5V; -1,25A; 1,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0604N3" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 40V; 4A; 0,75Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0602N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -20V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0604N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -40V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0602N2" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -20V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0604N2" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -40V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0602N2" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 20V; 4A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0602N3" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 20V; 4A; 0,75Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN0106N9" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 0,5A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-52">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4093" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF9530" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); -100V; -12A; 0,3Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN10KM" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/B&gt; (VMOS); 60V; 0,5A; 5,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO237">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN2222KM" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (VMOS); 60V; 0,5A; 7,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO237">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0604N2" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/B&gt; 40V; 4A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SUP75N06-08" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 75A; 0,008Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SUP65P06-20" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -60V; 60A; 0,020Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SPW47N60S5" prefix="Q">
<description>&lt;b&gt;Cool MOS Power Transistor&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="N-MOSFET"/>
</gates>
<devices>
<device name="" package="P-TO247">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS5680" prefix="Q">
<description>&lt;b&gt;60V N-Channel PowerTrench TM MOSFET&lt;/b&gt;&lt;p&gt;
FAIRCHILD FDS5680.pdf</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS"/>
</gates>
<devices>
<device name="" package="SO-8">
<connects>
<connect gate="G$1" pin="D" pad="5 6 7 8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1 2 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SI5902DC" prefix="Q">
<description>&lt;b&gt;Dual N-Channel 30-V (D-S) MOSFET&lt;/b&gt;&lt;p&gt;
Source: http://www.vishay.com/docs/71053/71053.pdf</description>
<gates>
<gate name="A" symbol="N-MOSFET-GDS-D"/>
<gate name="B" symbol="N-MOSFET-GDS-D"/>
</gates>
<devices>
<device name="" package="1206-8CHIP-FET">
<connects>
<connect gate="A" pin="D" pad="7 8"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="5 6"/>
<connect gate="B" pin="G" pad="4"/>
<connect gate="B" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="?20*" prefix="Q">
<description>&lt;b&gt;TEMIC / Siliconix N-Channel JFET&lt;/b&gt;&lt;p&gt;
Source: JFET-J201_Siliconix_data.pdf</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="J" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name="1"/>
<technology name="2"/>
<technology name="4"/>
</technologies>
</device>
<device name="SST" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name="1"/>
<technology name="2"/>
<technology name="4"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="3N2*" prefix="Q">
<description>&lt;b&gt;Motorola DUAL-GATE MOSFET VHF AMPLIFIER&lt;p&gt;
Source: 3N203[1].pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="DRAIN" pad="1"/>
<connect gate="G$1" pin="G1" pad="3"/>
<connect gate="G$1" pin="G2" pad="2"/>
<connect gate="G$1" pin="SOURCE" pad="4"/>
</connects>
<technologies>
<technology name="01"/>
<technology name="02"/>
<technology name="03"/>
<technology name="11"/>
<technology name="12"/>
<technology name="13"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="3SK45" prefix="Q">
<description>&lt;b&gt;HITACHI DUAL GATE N-MOSFET&lt;/b&gt; VHF TV/FM Tuner RF Amplifier, Mixer&lt;p&gt;
up to 200 MHz&lt;br&gt;
Source: 3SK45.pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="DRAIN" pad="1"/>
<connect gate="G$1" pin="G1" pad="3"/>
<connect gate="G$1" pin="G2" pad="2"/>
<connect gate="G$1" pin="SOURCE" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="RCA3N187" prefix="Q">
<description>&lt;b&gt;DUAL GATE N MOSFET Depletion Type&lt;/b&gt; up to 300MHz&lt;p&gt;
Source: RCA3N187[1].pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="DRAIN" pad="1"/>
<connect gate="G$1" pin="G1" pad="3"/>
<connect gate="G$1" pin="G2" pad="2"/>
<connect gate="G$1" pin="SOURCE" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="RCA40673" prefix="Q">
<description>&lt;b&gt;DUAL GATE N MOSFET Depletion Type&lt;/b&gt; RF Amplifier up to 400MHz&lt;p&gt;
Source: RCA40673.pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="DRAIN" pad="1"/>
<connect gate="G$1" pin="G1" pad="3"/>
<connect gate="G$1" pin="G2" pad="2"/>
<connect gate="G$1" pin="SOURCE" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="MRF136" prefix="Q">
<description>&lt;b&gt;RF Power Field-Effect Transistor&lt;/b&gt; N-Channel Enhancement-Mode MOSFET, 15W, 400MHz&lt;p&gt;
Sopurce: http://www.macom.com/data/datasheet/MRF136.pdf</description>
<gates>
<gate name="G$1" symbol="N-MOSFET-GDS"/>
</gates>
<devices>
<device name="" package="211-07_SMD">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SPP80P06P" prefix="Q">
<description>&lt;b&gt;SIPMOS(R) Power-Transistor&lt;/b&gt; P-Channel, Enhancement mode&lt;p&gt;
Source: http://www.infineon.com/upload/Document/cmc_upload/documents/012/3619/SPP80P06P.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SPD30P06P" prefix="Q">
<description>&lt;b&gt;SIPMOS(R) Power-Transistor&lt;/b&gt; P-Channel, Enhancement mode&lt;p&gt;
Source: http://www.infineon.com/upload/Document/cmc_upload/documents/012/3615/SPD_U30P06P.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="TO252" package="TO252">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
<device name="" package="TO251AA">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SPB80P06P" prefix="Q">
<description>&lt;b&gt;SIPMOS (R) Power-Transistor&lt;/b&gt; P-Channel, Enhancement mode&lt;p&gt;
Source: http://www.infineon.com/upload/Document/cmc_upload/documents/011/3685/SPP80P06P.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="TO263">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSP170P" prefix="Q">
<description>&lt;b&gt;SIPMOS(R) Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode&lt;p&gt;
Source: http://www.infineon.com/upload/Document/BSP170P_Rev2.4.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SOT223">
<connects>
<connect gate="G$1" pin="D" pad="2 4"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSA223SP" prefix="Q">
<description>&lt;b&gt;OptiMOS(R)-P Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)&lt;p&gt;
Source: http://www.infineon.com/upload/Document/BSA223SP_Rev1.3.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SC75_INFINEON">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSD223P" prefix="Q">
<description>&lt;b&gt;OptiMOS(R)-P Small-Signal-Transistor&lt;/b&gt; Dual P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)&lt;p&gt;
Source: http://www.infineon.com/upload/Document/BSD223P_Rev1.3.pdf</description>
<gates>
<gate name="A" symbol="P-MOSFET"/>
<gate name="B" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SOT363_INFINEON">
<connects>
<connect gate="A" pin="D" pad="6"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
<connect gate="B" pin="D" pad="3"/>
<connect gate="B" pin="G" pad="5"/>
<connect gate="B" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSV236SP" prefix="Q">
<description>&lt;b&gt;OptiMOS(R)-P Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)&lt;p&gt;
Source: http://www.infineon.com/upload/Document/BSV236SP_Rev1.3.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SOT363_INFINEON">
<connects>
<connect gate="G$1" pin="D" pad="1 2 5 6"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSL207SP" prefix="Q">
<description>&lt;b&gt;OptiMOS(R)-P Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)&lt;p&gt;
Source: http://www.infineon.com/upload/Document/BSL207SP_Rev2.01.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SC74_INFINEON">
<connects>
<connect gate="G$1" pin="D" pad="1 2 5 6"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSO201SP" prefix="Q">
<description>&lt;b&gt;OptiMOS(R)-P Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode, Super Logic Level (2.5 V rated)&lt;p&gt;
RDS(on) 8mOhm, ID -14.9 a&lt;br&gt;
Source: http://www.infineon.com/upload/Document/cmc_upload/documents/011/3655/BSO201SP_211201.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SO-8">
<connects>
<connect gate="G$1" pin="D" pad="5 6 7 8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="S" pad="1 2 3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSL307SP" prefix="Q">
<description>&lt;b&gt;OptiMOS(R)-P Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode, Logic Level&lt;p&gt;
ID -5.5 A&lt;br&gt;
Source: http://www.infineon.com/upload/Document/BSL307SP_Rev%201.2.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="SC74_INFINEON">
<connects>
<connect gate="G$1" pin="D" pad="1 2 5 6"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SPD50P03LG" prefix="Q">
<description>&lt;b&gt;OPTIMOS®-P Small-Signal-Transistor&lt;/b&gt; P-Channel, Enhancement mode, Logic level&lt;p&gt;
RDS(on) 7 mOhm, ID -50A&lt;br&gt;
Source: http://www.infineon.com/upload/Document/SPD50P03L%20G_Rev1.5.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="" package="TO252-51">
<connects>
<connect gate="G$1" pin="D" pad="5"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3 4"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF7389" prefix="Q">
<description>&lt;b&gt;Complimentary Half Bridge&lt;/b&gt; HEXFET Power MOSFET&lt;p&gt;
Source: http://www.irf.com/product-info/datasheets/data/irf7389.pdf</description>
<gates>
<gate name="G$1" symbol="IRF7389"/>
</gates>
<devices>
<device name="" package="SO08-IRF">
<connects>
<connect gate="G$1" pin="D" pad="5 6 7 8"/>
<connect gate="G$1" pin="N-G" pad="2"/>
<connect gate="G$1" pin="N-S" pad="1"/>
<connect gate="G$1" pin="P-G" pad="4"/>
<connect gate="G$1" pin="P-S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF960" prefix="Q">
<description>&lt;b&gt;N-CHANNEL Dual Gate MOS-Fieleffect&lt;/b&gt; Tetrode - Depletion Mode&lt;p&gt;
Source: Telefunken Electronic BF960.pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="TO50">
<connects>
<connect gate="G$1" pin="DRAIN" pad="1-D"/>
<connect gate="G$1" pin="G1" pad="3-G1"/>
<connect gate="G$1" pin="G2" pad="4-G2"/>
<connect gate="G$1" pin="SOURCE" pad="2-S"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF961" prefix="Q">
<description>&lt;b&gt;N-Channel Dual Gate MOS-Fieldeffect Tetrode&lt;/b&gt;, Depletion Mode, up to 300 MHz&lt;p&gt;
Source: TEMIC Semiconductors - BF691.pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="TO50">
<connects>
<connect gate="G$1" pin="DRAIN" pad="1-D"/>
<connect gate="G$1" pin="G1" pad="3-G1"/>
<connect gate="G$1" pin="G2" pad="4-G2"/>
<connect gate="G$1" pin="SOURCE" pad="2-S"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF98*" prefix="Q">
<description>&lt;b&gt;N-CHANNEL Dual Gate MOS-FET&lt;/b&gt;&lt;p&gt;
Source: BF981.pdf</description>
<gates>
<gate name="G$1" symbol="DUAL-GATE-N_MOSFET"/>
</gates>
<devices>
<device name="" package="SOT103">
<connects>
<connect gate="G$1" pin="DRAIN" pad="2-D"/>
<connect gate="G$1" pin="G1" pad="4-G1"/>
<connect gate="G$1" pin="G2" pad="3-G2"/>
<connect gate="G$1" pin="SOURCE" pad="1-S"/>
</connects>
<technologies>
<technology name="1"/>
<technology name="2"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="?548*" prefix="Q">
<description>&lt;b&gt;N-Channel JFETs&lt;/b&gt;&lt;p&gt;
Source: VISHAY 2N5484.pdf&lt;p&gt;
Compatible:&lt;br&gt;
&lt;b&gt;TO92&lt;/b&gt;&lt;br&gt;
2N5245&lt;br&gt;
J304&lt;br&gt;
J305&lt;br&gt;
U310&lt;br&gt;
J308&lt;br&gt;
J309&lt;br&gt;
J310&lt;br&gt;
&lt;b&gt;TO72&lt;/b&gt;&lt;br&gt;
2N4416&lt;br&gt;
2N4416A&lt;br&gt;
2N3823&lt;br&gt;
2N4351&lt;br&gt;
3N169&lt;br&gt;
3N170&lt;br&gt;
3N171&lt;br&gt;
MFE3002&lt;br&gt;
&lt;b&gt;TO18&lt;/b&gt;&lt;br&gt;
2N3796&lt;br&gt;
2N3797&lt;br&gt;
MFE825&lt;br&gt;
Source: Motorola European Master Guide Pacge 3-59</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="2N" package="TO92-">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name="4"/>
<technology name="5"/>
<technology name="6"/>
</technologies>
</device>
<device name="SST" package="SOT23">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name="4"/>
<technology name="5"/>
<technology name="6"/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2SK241" prefix="Q">
<description>&lt;b&gt;SILICON N CHANNEL MOS TYPE&lt;/b&gt;&lt;p&gt;
THOSHIBA FILED EFFEKT TRANSISTOR&lt;br&gt;</description>
<gates>
<gate name="G$1" symbol="2SK241"/>
</gates>
<devices>
<device name="" package="2SK241">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2SK439" prefix="Q">
<description>&lt;b&gt;Silicon N-Channel MOS FET&lt;/b&gt;&lt;p&gt;
Source: HITACHI .. 2SK439.pdf</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="SPAK">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N5950" prefix="Q">
<description>&lt;b&gt;N-Channel JFET RF Amplifier&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDD4141" prefix="Q">
<description>&lt;b&gt;P-Channel PowerTrench® MOSFET&lt;/b&gt;&lt;p&gt;
Source:  FDD4141.pdf</description>
<gates>
<gate name="G$1" symbol="P-MOSFET"/>
</gates>
<devices>
<device name="TO252" package="TO252">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2SK389" prefix="Q">
<description>&lt;b&gt;DUAL FIELD EFFECT TRANSISTOR&lt;/b&gt; SILICON MONOLITHIC N CHANNEL JUNCTION TYPE&lt;p&gt;
Source: http://pdf1.alldatasheet.com/datasheet-pdf/view/30769/TOSHIBA/2SK389.html</description>
<gates>
<gate name="A" symbol="JFET_N"/>
<gate name="B" symbol="JFET_N"/>
</gates>
<devices>
<device name="" package="2-10M1A">
<connects>
<connect gate="A" pin="D" pad="1"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="3"/>
<connect gate="B" pin="D" pad="7"/>
<connect gate="B" pin="G" pad="6"/>
<connect gate="B" pin="S" pad="5"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2SJ109" prefix="Q">
<description>&lt;b&gt;DUAL FIELD EFFECT TRANSISTOR&lt;/b&gt; SILICON MONOLITHIC P CHANNEL JUNCTION TYPE&lt;p&gt;
Source:http://www.datasheetcatalog.org/datasheets/270/201785_DS.pdf</description>
<gates>
<gate name="A" symbol="JFET_P"/>
<gate name="B" symbol="JFET_P"/>
</gates>
<devices>
<device name="" package="2-10M1A">
<connects>
<connect gate="A" pin="D" pad="1"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="3"/>
<connect gate="B" pin="D" pad="7"/>
<connect gate="B" pin="G" pad="6"/>
<connect gate="B" pin="S" pad="5"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4416" prefix="Q">
<description>&lt;b&gt;N-Channel JFET&lt;/b&gt;&lt;p&gt;
Source: www.vishay.com</description>
<gates>
<gate name="G$1" symbol="JFET-N"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
</devicesets>
</library>
</drawing>
</eagle>
